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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV859 UHF linear push-pull power transistor
Product specification Supersedes data of 1995 Oct 04 1996 Jul 26
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
FEATURES * Double internal input and output matching for an optimum wideband capability and high gain * Polysilicon emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATION * Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V.
5 3
Top view
MAM031
BLV859
PINNING SOT262B PIN 1 2 3 4 5 SYMBOL c1 c2 b1 b2 e DESCRIPTION collector 1 collector 2 base 1 base 2 emitter
handbook, halfpage
c1
1
2
b1 e
5 4
b2
c2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter push-pull test circuit. MODE OF OPERATION CW class-A Note 1. Three-tone test signal (-8, -16 and -10 dB); dim = -54 dB. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. f (MHz) 860 VCE (V) 25 ICQ (A) 2 x 2.25 Po sync (W) 20(1) Gp (dB) 10(1)
1996 Jul 26
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Tmb = 70 C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - MIN.
BLV859
MAX. 60 28 2.5 15 15 145 +150 200 V V V A A
UNIT
W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from mounting-base to heatsink note 1 CONDITIONS VALUE 0.15 UNIT K/W K/W
thermal resistance from junction to mounting-base Ptot = 145 W; Tmb = 70 C note 1 0.9
Note to Limiting values and Thermal characteristics 1. Total device; both sections equally loaded.
handbook, halfpage
320
MGD540
Ptot (W)
(2)
240
(1)
160
80
0 0 40 80 120 Tmb C 160
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 Power derating curve.
1996 Jul 26
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
CHARACTERISTICS Values apply to either transistor section; Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE Cc Cre Note PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current collector-emitter leakage current DC current gain collector capacitance feedback capacitance CONDITIONS IC = 30 mA; IE = 0 IC = 60 mA; IB = 0 IE = 1.2 mA; IC = 0 VCB = 27 V; VBE = 0 VCE = 20 V VCE = 25 V; IC = 2.25 A VCB = 25 V; IE = ie = 0; f = 1 MHz VCE = 25 V; IB = 0; f = 1 MHz MIN. 60 28 2.5 - - 30 - - TYP. - - - - - - 36(1) 22
BLV859
MAX. - - - 3 6 140 - -
UNIT V V V mA mA pF pF
1. The value of Cc is that of the die only; it is not measurable, because of the internal matching network.
MGD541
handbook, halfpage
160
handbook, halfpage
80
MGD542
hFE 120
Cc (pF)
60
80
40 40
0 0 2 4 IC (A) 6
20 0 10 20 30 VCB (V) 40
VCE = 25 V; tp = 500 s; = <1 %.
IE = ie = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector capacitance as a function of collector-base voltage; typical values.
1996 Jul 26
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter push-pull class-A test circuit. MODE OF OPERATION CW class-A CW class-A Notes f (MHz) 860 860 VCE (V) 25 25 ICQ (A) 2 x 2.25 2 x 2.25 Po sync (W) 20(1) 20(2) Gp (dB) 10(1) 10(2)
BLV859
dim (dB) -54(1) -51(2)
1. Three-tone test method (vision carrier -8 dB, sound carrier -10 dB, sideband signal -16 dB), 0 dB corresponds to peak sync level. 2. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), 0 dB corresponds to peak sync level. Ruggedness in class-A operation The BLV859 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the conditions: VCE = 25 V; ICQ = 2 x 2.25 A; f = 860 MHz; Th = 25 C; Po sync = 20 W.
handbook, halfpage
80
MGD543
handbook, halfpage
14
MGD544
Po sync (W) 60
(1)
(2)
Gp (dB) 10
(1) (2)
40
6 20
0 0 2 4 6 8 Pi sync (W)
2 0 20 40 60 80 Po sync (W)
VCE = 25 V; ICQ = 2 x 2.25 A; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 25 C. (2) Th = 70 C.
VCE = 25 V; ICQ = 2 x 2.25 A; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 25 C. (2) Th = 70 C.
Fig.5
Output power as a function of input power; typical values.
Fig.6
Power gain as a function of output power; typical values.
1996 Jul 26
5
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
handbook, halfpage
-10
MGD545
handbook, halfpage
-40
MGD546
dim (dB) -30
(1) (2)
dim (dB) -50
(1) (2)
-50
-60
-70 0 20 40 60 80 Po sync (W)
-70 3 4 5 IC (A) 6
VCE = 25 V; ICQ = 2 x 2.25 A; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 70 C. (2) Th = 25 C.
VCE = 25 V; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 70 C. (2) Th = 25 C.
Fig.7
Intermodulation distortion as a function of output power; typical values.
Fig.8
Intermodulation distortion as a function of collector current; typical values.
1996 Jul 26
6
Product specification
BLV859
Fig.9 Class-A test circuit at f = 860 MHz.
handbook, full pagewidth
1996 Jul 26
Vsupply C5 R4 C6 C2 C3 TR2 TR2 L17
Philips Semiconductors
, ,
R2 TR1 R1 +VCC L9
P1 C1 R3
+VBB L7
UHF linear push-pull power transistor
7
L5 L13 DUT L11 L3 C16 C17 C18 C19 C20 C21 C22 L4 L14 L6 L12 L8 L10
C4
C7
C9
C10 L15
C13
L1
R5
C15
output 50
input 50
B1
B2
C14
R6
L2
L16
C8
C11
C12
MGD547
,,,,, ,,,,, ,,,,,,,, ,,,,, ,,,,, ,,,,,,,, ,,,,, ,,,,,
,,,,, ,,,,,,,, ,,,,, ,,,,, ,,,,, ,,,,,,,, ,,,,, ,,,,,
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
handbook, full pagewidth
115
55
TR1 ECB
R3 C1
P1 TR2 R4 C3 C5 C6 L17 C13 B2 L7 L9 B C L11 C20 & C21 C19 & C20 L13 C9 C10 C15 L14 L12 C22 & C23 C21 & C22 L10 L15 & L16 C12 C11 GND C16 & C17 L5 L3
VCC
R1 R2 C2 C4 B1
C7 50 input R5 C14 R6 C8
L1 & L2
BLV859
L4 L6 C18 & C19 L8 B C
50 output
MGD551
inner lead and outer lead are shorted. (repeat for each balun)
Dimensions in mm.
Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit.
1996 Jul 26
8
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
List of components COMPONENT C4 C7, C8 C9, C10, C11, C12 C13 C14, C15 C16 C17, C21 C18 C19 C20 C22 L1, L2, L15, L16 L3, L4 L5, L6 L7, L8, L9, L10 L11, L12 L13, L14 L17 B1, B2 R1 R2 R3 R4 R7, R8 P1 TR1 TR2 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. DESCRIPTION solid aluminium capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor solid aluminium capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 Tekelec Giga trim 37271 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 Semi rigid coax balun UT70-25 SMD resistor SMD resistor SMD resistor SMD resistor SMD resistor Murata potentiometer RG4M08-102VM-TG NPN transistor double PNP transistor VALUE 15 nF 47 F; 25 V 10 nF 100 nF 10 F; 63 V 47 pF 8.2 pF 0.6 to 4.5 pF 13 pF 3.9 pF 12 pF 9.1 pF 50 50 32.4 16.2 37.5 50 77.7 220 1.8 2.7 k 33 3.3 1 k BD139 BVC62 2 x 30.6 mm 2 x 9.5 mm 4 x 3 mm 9.5 x 2.6 mm 3.5 x 3.4 mm 2 x 13.9 mm 1 x 120 mm 805 805 805 805 805 805 1206
BLV859
DIMENSIONS CATALOGUE No. 805 2222 590 16629 2222 030 36479 2222 590 16627 2222 591 16641 2222 030 381109
C1, C2, C3, C5, C6 multilayer ceramic chip capacitor;
Z = 25 , 1.5 70 mm 2322 734 22201 2322 734 21808 2322 734 22702 2322 734 23309 2322 734 23308
9330 912 20112 5332 130 60505
2. The striplines are on a double copper-clad PCB: Rogers ULTRALAM 200 (B0300M1046QB) (r = 2.55); thickness 0.76 mm.
1996 Jul 26
9
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV859
handbook, halfpage
8
MGD548
handbook, halfpage
8
MGD549
Zi () 6 xi
ZL () 6 RL 4
4 2 XL 2 ri 0
0 450
550
650
750
850 950 f (MHz)
-2 450
550
650
750
850 950 f (MHz)
VCE = 25 V; ICQ = 2 x 2.25 A; Po sync = 20 W (total device); Th = 25 C.
VCE = 25 V; ICQ = 2 x 2.25 A; Po sync = 20 W (total device); Th = 25 C.
Fig.11 Input impedance (per section) as a function of frequency (series components); typical values.
Fig.12 Load impedance (per section) as a function of frequency (series components); typical values.
handbook, halfpage
20
MGD550
Gp (dB) 16
12
8
handbook, halfpage
4
Zi ZL
MBA451
0 450
550
650
750
850 950 f (MHz)
VCE = 25 V; ICQ = 2 x 2.25 A; Po sync = 20 W (total device); Th = 25 C.
Fig.13 Gain as a function of frequency; typical values.
Fig.14 Definition of transistor impedance.
1996 Jul 26
10
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
PACKAGE OUTLINE
BLV859
handbook, full pagewidth
0.13 2.47 2.20 21.85 1.65 5.4 max
seating plane
0.25 M 8.51 8.25 (4x) 2.54 1 2
10.4 max 5 3 11.05 27.94 34.3 max 4
3.3 9.8 15.6 3.0 max
MSA453
Dimensions in mm. Torque on screw: min. 0.6 Nm; max. 0.75 Nm. Recommended screw: cheese-head 4-40 UNC/2A. Heatsink compound must be applied sparingly and evenly distributed.
Fig.15 SOT262B.
1996 Jul 26
11
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BLV859
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Jul 26
12
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
NOTES
BLV859
1996 Jul 26
13
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
NOTES
BLV859
1996 Jul 26
14
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
NOTES
BLV859
1996 Jul 26
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996
Internet: http://www.semiconductors.philips.com (1) BLV859_2 July 18, 1996 12:44 pm SCA51
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands
127041/1200/02/pp16 Date of release: 1996 Jul 26 Document order number: 9397 750 00987

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